NTHS4101PT1G
Manufacturer:
On Semiconductor
Mfr.Part #:
NTHS4101PT1G
Datasheet:
Description:
MOSFETs ChipFET-8 SMD/SMT P-Channel number of channels:1 1.3 W -20 V Continuous Drain Current (ID):4.8 A 35 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -20 V |
| Length | 3.1 mm |
| Width | 1.7 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 21 mΩ |
| Height | 1.1 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | -4.8 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 1.3 W |
| Power Dissipation | 1.3 W |
| Threshold Voltage | -1.5 V |
| Number of Channels | 1 |
| Input capacitance | 2.1 nF |
| Continuous Drain Current (ID) | 4.8 A |
| Rds On Max | 34 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Type(Transistor Polarity) | P-Channel |
| Turn-On Delay Time | 8 ns |
| Turn-Off Delay Time | 75 ns |
| Element Configuration | Single |
| Fall Time | 28 ns |
| Rise Time | 28 ns |
| Gate Charge | 35 nC |
| Drain to Source Resistance | 42 mΩ |
| Nominal Vgs | -1.5 V |
| Gate to Source Voltage (Vgs) | 8 V |
| Drain to Source Breakdown Voltage (Vds) | -20 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 1.5 V |
Stock: 70
Distributors
pcbx
pcbxUnit Price$1.16774
Ext.Price$1.16774
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.16774 | $1.16774 |
| 10 | $0.97382 | $9.73820 |
| 25 | $0.89441 | $22.36025 |
| 50 | $0.82147 | $41.07350 |
| 100 | $0.75447 | $75.44700 |
| 300 | $0.72639 | $217.91700 |
| 500 | $0.69937 | $349.68500 |
| 1000 | $0.67493 | $674.93000 |